SSM3J351R.LF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005652261
- Бренд
- Toshiba
- Brand:
- Toshiba
- Series
- U-MOSVI
- FET Type
- P-Channel
- Packaging
- Tape & Reel(TR)
Цена по запросу
(от 130 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
60 В 3,5 А, 2 Вт 134 Мом при 10 В, 1 А 2 В при 1 мА P-канальные МОП-транзисторы SOT-23F
Технические параметры
| Brand: | Toshiba |
| Series | U-MOSVI |
| FET Type | P-Channel |
| Packaging | Tape & Reel(TR) |
| Vgs (Max) | +10V, -20V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Toshiba Semiconductor and Storage |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-23F-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | SOT-23-3 Flat Leads |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15.1 nC |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | 150В°C |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 134mOhm @ 1A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 2 W |
| Power Dissipation (Max) | 2W(Ta) |
| Supplier Device Package | SOT-23F |
| Vgs - Gate-Source Voltage: | -20 V, +10 V |
| Typical Turn-On Delay Time: | 32 ns |
| Gate Charge (Qg) (Max) @ Vgs | 15.1nC @ 10V |
| Typical Turn-Off Delay Time: | 100 ns |
| Drain to Source Voltage (Vdss) | 60V |
| Id - Continuous Drain Current: | 3.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 164 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Current - Continuous Drain (Id) @ 25В°C | 3.5A(Ta) |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |