SSM3J332R,LF, 30V 6A 42mOhm@10V,5A 1W 1.2V@1mA P Channel SOT-23F MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017601691
- Артикул
- SSM3J332R,LF
- Бренд
- Toshiba
- ECCN
- EAR99
- PPAP
- No
- RoHS
- Details
- Type
- Power MOSFET
Цена по запросу
(от 20 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канал 30 В 6 А (Ta) 1 Вт (Ta) для поверxностного монтажа SOT-23F
Технические параметры
| ECCN | EAR99 |
| PPAP | No |
| RoHS | Details |
| Type | Power MOSFET |
| Brand | Toshiba |
| HTSUS | 8541.29.0095 |
| Series | U-MOSVI -> |
| EU RoHS | Compliant |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | P-Channel |
| Material | Si |
| Mounting | Surface Mount |
| Polarity | P |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | В±12V |
| Automotive | No |
| Lead Shape | Flat |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 0.04 |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | RoHS Compliant |
| Unit Weight | 0.050717 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Toshiba |
| Package Type | SOT-23F |
| Rad Hardened | No |
| Корпус | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 Flat Leads |
| Transistor Type | 1 P-Channel |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23F |
| Power Dissipation | 1(W) |
| Number of Channels | 1 Channel |
| Number of Elements | 1 |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Структура | P-Channel |
| Base Product Number | TD62083 -> |
| Transistor Polarity | P Channel |
| Drain-Source On-Volt | 30(V) |
| Operating Temp Range | -55C to 150C |
| Factory Pack Quantity | 3000 |
| Operating Temperature | 150В°C (TJ) |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 1 W |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| Особенности | - |
| Power Dissipation (Max) | 1W (Ta) |
| Supplier Device Package | SOT-23F |
| Continuous Drain Current | 6(A) |
| Gate-Source Voltage (Max) | ±12(V) |
| Vgs - Gate-Source Voltage | 1.2V @ 1mA |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| Id - Continuous Drain Current | -6 A |
| Drain to Source Voltage (Vdss) | 30V |
| Maximum Power Dissipation (mW) | 1000 |
| Typical Gate Charge @ Vgs (nC) | 8.2 4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| кол-во в упаковке | 3000 |
| Maximum Drain Source Voltage (V) | 30 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 42mО© @ 5A,10V |
| Power Dissipation-Max (Ta=25В°C) | 1W |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V |
| Maximum Continuous Drain Current (A) | 6 |
| Operating Temperature Classification | Military |
| Typical Input Capacitance @ Vds (pF) | 860 15V |
| Vds - Drain-Source Breakdown Voltage | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Maximum Drain Source Resistance (mOhm) | 42 10V |
| Continuous Drain Current (Id) @ 25В°C | 6A |
| Current - Continuous Drain (Id) @ 25В°C | 6A (Ta) |
| Крутизна характеристики, S | 18 |
| Пороговое напряжение на затворе | 1V@1mA |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 42мОм |