SSM3J15FV,L3F, SOT-723 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062876667
- Артикул
- SSM3J15FV,L3F
- Бренд
- Toshiba
- Brand:
- Toshiba
- Series
- ПЂ-MOSVI
- FET Type
- P-Channel
- Packaging
- Cut Tape(CT)
Цена по запросу
(от 8 ₽)
Минимальный заказ: 8000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор с малым сигналом и высокой скоростью переключения МОП-транзисторов
Технические параметры
| Brand: | Toshiba |
| Series | ПЂ-MOSVI |
| FET Type | P-Channel |
| Packaging | Cut Tape(CT) |
| Vgs (Max) | В±20V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.01 |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Toshiba Semiconductor and Storage |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-723-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | SOT-723 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Vgs(th) (Max) @ Id | 1.7V @ 100ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Factory Pack Quantity: | 8000 |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| Pd - Power Dissipation: | 150 mW |
| Power Dissipation (Max) | 150mW(Ta) |
| Supplier Device Package | VESM |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 65 ns |
| Typical Turn-Off Delay Time: | 175 ns |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 12 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 9.1pF @ 3V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Current - Continuous Drain (Id) @ 25В°C | 100mA(Ta) |