SSM3J15CT.L3F
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070471396
- Бренд
- Toshiba
- Brand:
- Toshiba
- FET Type
- P-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET(Metal Oxide)
Цена по запросу
(от 11 ₽)
Минимальный заказ: 10000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канал 30 В 100 мА (Ta) 100 МВт (Ta) для поверxностного монтажа CST3
Технические параметры
| Brand: | Toshiba |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | CST-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package / Case | SC-101, SOT-883 |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 3.6 nC |
| Vgs(th) (Max) @ Id | 1.7V @ 100µA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | 150°C |
| Factory Pack Quantity: | 10000 |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| Pd - Power Dissipation: | 100 mW |
| Power Dissipation (Max) | 100mW(Ta) |
| Supplier Device Package | CST3 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 175 ns |
| Typical Turn-Off Delay Time: | 65 ns |
| Drain to Source Voltage (Vdss) | 30 V |
| Id - Continuous Drain Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Rds On - Drain-Source Resistance: | 12 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 9.1 pF @ 3 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 100mA(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |