Dual N-Channel MOSFET, 47 A, 700 V, 3-PIn TO-247AD VIshay SQW44N65EF-GE3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064019302
- Артикул
- SQW44N65EF-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series
- E Series
- Pin Count
- 3
- Fall Time:
- 132 ns
Цена по запросу
(от 1 230 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовые МОП-транзисторы серии Vishay E снижают потери при переключении и проводимости. Низкий коэффициент полезного действия (FOM) Ron x Qg
Технические параметры
| Brand: | Vishay/Siliconix |
| Series | E Series |
| Pin Count | 3 |
| Fall Time: | 132 ns |
| Packaging: | Bulk |
| Rise Time: | 142 ns |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247AD |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247AD-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 266 nC |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 500 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 94 ns |
| Maximum Drain Source Voltage | 700 V |
| Typical Turn-Off Delay Time: | 412 ns |
| Id - Continuous Drain Current: | 47 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 0.073 Ω |
| Maximum Continuous Drain Current | 47 A |
| Rds On - Drain-Source Resistance: | 73 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 700 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 480 |