SQSA80ENW-T1_GE3, 80V 18A 0.021Ohm@10V,10A 62.5W 2.5V@250uA 1 N-channel PowerPAK-1212-8W MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044550905
- Артикул
- SQSA80ENW-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- Unknown
- EU RoHS
- Compliant
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 131,93 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Вес, г | 0.07 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 |
| Package Length | 3.05 |
| EDA / CAD Models | SQSA80ENW-T1_GE3 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212-W EP |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 2 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 62500 |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Gate Charge @ Vgs (nC) | 17@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Typical Input Capacitance @ Vds (pF) | 1086@40V |
| Maximum Drain Source Resistance (MOhm) | 21@10V |