SQRS152ELP-T1_GE3, MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8024360557
- Артикул
- SQRS152ELP-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 8.5 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 4.3 ns
Цена по запросу
(от 177,24 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 8.5 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 4.3 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | PowerPAK SO-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 34 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Особенности | - |
| Pd - Power Dissipation: | 35 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9.6 ns |
| Typical Turn-Off Delay Time: | 25 ns |
| Id - Continuous Drain Current: | 58 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 69 S |
| Rds On - Drain-Source Resistance: | 5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |