SQM120N10-3M8_GE3, Транзистор N-MOSFET, полевой, 100В, 120А, 375Вт, D2PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8074615871
- Артикул
- SQM120N10-3M8_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series:
- SQ
- Fall Time:
- 12 ns
- Rise Time:
- 110 ns
Цена по запросу
(от 383,77 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 100В, 120А, 375Вт, D2PAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Brand: | Vishay/Siliconix |
| Series: | SQ |
| Fall Time: | 12 ns |
| Rise Time: | 110 ns |
| Tradename: | TrenchFET |
| Вес, г | 1.98 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 190 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 375 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 16 ns |
| Typical Turn-Off Delay Time: | 40 ns |
| Id - Continuous Drain Current: | 120 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 82 S |
| Rds On - Drain-Source Resistance: | 3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |