SQM100P10-19L_GE3, Транзистор P-MOSFET, полевой, -100В, -53А, 125Вт, D2PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070042467
- Артикул
- SQM100P10-19L_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- Unknown
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 375,44 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 100V 93A автомобильный AEC-Q101 3-контактный(2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Вес, г | 2 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 30 |
| Typical Rise Time (ns) | 21 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 375000 |
| Typical Gate Charge @ 10V (nC) | 220 |
| Typical Gate Charge @ Vgs (nC) | 220@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 110 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 93 |
| Typical Input Capacitance @ Vds (pF) | 10800@25V |
| Maximum Drain Source Resistance (mOhm) | 19@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |