SQJB00EP-T1_BE3, MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070210984
- Артикул
- SQJB00EP-T1_BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 22 ns
- Rise Time:
- 3 ns
- Вес, г
- 0.19
Цена по запросу
(от 146,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 22 ns |
| Rise Time: | 3 ns |
| Вес, г | 0.19 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | PowerPAK-SO-8-4 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SQJB00EP-T1_GE3 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 20 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 48 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 13 ns |
| Typical Turn-Off Delay Time: | 23 ns |
| Id - Continuous Drain Current: | 30 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |