SQJA84EP-T1_GE3, 80V 46A 55W 12.5mOhm@10V,10A 2.5V@250uA 1 N-Channel PowerPAK-SO-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044550013
- Артикул
- SQJA84EP-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- Unknown
- Brand:
- Vishay/Siliconix
- Series
- Automotive, AEC-Q101, TrenchFETВ®
Цена по запросу
(от 161,20 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, AEC-Q101, N-CH, 80 В, POWERPAK SO; Полярность транзистора: N-канальный; Постоянный ток стока Id:46 А; Напряжение источника стока Vds:80 В; Сопротивление включения Rds(on): 0,0102 Ом; Тестовое напряжение Rds(on) Vgs:10 В; Пороговое напряжение Vgs:2 В; Рассеиваемая мощность Pd: 55 Вт; Тип корпуса транзистора: PowerPak SO; Количество контактов: 8; Максимальная рабочая температура: 175°C; Ассортимент продукции: Серия TrenchFET; Автомобильный квалификационный стандарт: AEC-Q101; MSL: MSL 1 - неограниченный; SVHC: Без SVHC (12 января 2017 г.)
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Brand: | Vishay/Siliconix |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| EU RoHS | Compliant |
| Series: | SQJA |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape(CT) |
| Pin Count | 5 |
| Vgs (Max) | В±20V |
| Automotive | Yes |
| Fall Time: | 7 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 5 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.14 |
| FET Feature | - |
| PCB changed | 4 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Vishay Siliconix |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Triple Source |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | PowerPAKВ® SO-8 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8-4 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 35 nC |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 10A, 10V |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 5 |
| Pd - Power Dissipation: | 55 W |
| Power Dissipation (Max) | 55W(Tc) |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Typical Turn-Off Delay Time: | 23 ns |
| Drain to Source Voltage (Vdss) | 80V |
| Id - Continuous Drain Current: | 46 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 55000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 21 |
| Typical Gate Charge @ Vgs (nC) | 21@10V |
| Forward Transconductance - Min: | 50 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 23 |
| Rds On - Drain-Source Resistance: | 10.2 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 25V |
| Maximum Continuous Drain Current (A) | 46 |
| Typical Input Capacitance @ Vds (pF) | 1565@25V |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Maximum Drain Source Resistance (mOhm) | 12.5@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 46A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |