SQJA38EP-T1_GE3, 40V 60A 3.9mOhm@10A,10V 68W N Channel PowerPAK-SO-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070127550
- Артикул
- SQJA38EP-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series:
- SQJA
- Fall Time:
- 57 ns
- Rise Time:
- 5 ns
Цена по запросу
(от 136,91 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Автомобильный N-канальный МОП-транзистор напряжением 40 В (D-S) при температуре 175°C. Силовой МОП-транзистор TrenchFET®
Технические параметры
| Brand: | Vishay/Siliconix |
| Series: | SQJA |
| Fall Time: | 57 ns |
| Rise Time: | 5 ns |
| Tradename: | PowerPAK |
| Вес, г | 0.12 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8-4 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 48.2 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Power Dissipation (Pd) | 68W |
| Pd - Power Dissipation: | 68 W |
| Total Gate Charge (Qg@Vgs) | 75nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 14 ns |
| Input Capacitance (Ciss@Vds) | 3.9nF@25V |
| Typical Turn-Off Delay Time: | 35 ns |
| Continuous Drain Current (Id) | 60A |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 51 S |
| Rds On - Drain-Source Resistance: | 6.7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |