SQJ481EP-T1_GE3, Транзистор: P-MOSFET, полевой, -80В, -9,2А, 15Вт, PowerPAK® SO8
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- Код товара
- 8070077648
- Артикул
- SQJ481EP-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Series
- Automotive, AEC-Q101, TrenchFETВ®
- FET Type
- P-Channel
- Packaging
- Cut Tape(CT)
- Pin Count
- 4
Цена по запросу
(от 114,12 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -80В, -9,2А, 15Вт, PowerPAK® SO8 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| FET Type | P-Channel |
| Packaging | Cut Tape(CT) |
| Pin Count | 4 |
| Vgs (Max) | В±20V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.6 |
| FET Feature | - |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Vishay Siliconix |
| Package Type | PowerPAK SO-8L |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Automotive Standard | AEC-Q101 |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 10A, 10V |
| Power Dissipation (Max) | 45W(Tc) |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 45 W |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Maximum Drain Source Voltage | 80 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 80V |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Drain Source Resistance | 90 mΩ |
| Maximum Continuous Drain Current | 16 A |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25В°C | 16A(Tc) |