SQJ443EP-T1_GE3, Транзистор P-MOSFET, полевой, -40В, -23А, 28Вт, PowerPAK® SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8047982508
- Артикул
- SQJ443EP-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- Unknown
- Series
- Automotive, AEC-Q101, TrenchFETВ®
- EU RoHS
- Compliant
Цена по запросу
(от 150,66 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 40V 40A Автомобильный AEC-Q101 5-контактный (4 + вкладки) блок питания SO T/R
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| EU RoHS | Compliant |
| FET Type | P-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Vgs (Max) | В±20V |
| Automotive | Yes |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.6 |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Vishay Siliconix |
| Configuration | Single Triple Source |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAKВ® SO-8 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Operating Temperature | -55В°C ~ 175В°C(TA) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 18A, 10V |
| Typical Fall Time (ns) | 29 |
| Typical Rise Time (ns) | 14 |
| Power Dissipation (Max) | 83W(Tc) |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Maximum Power Dissipation (mW) | 83000 |
| Typical Gate Charge @ 10V (nC) | 38 |
| Typical Gate Charge @ Vgs (nC) | 38@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 2030pF @ 20V |
| Maximum Continuous Drain Current (A) | 40 |
| Typical Input Capacitance @ Vds (pF) | 1625@20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Maximum Drain Source Resistance (mOhm) | 29@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Current - Continuous Drain (Id) @ 25В°C | 40A(Tc) |