SQJ433EP-T1_GE3, 30V 75A 0.0081Ohm@10V,16A 83W 2.5V@250uA 1 pIece P-channel PowerPAK-SO-8L MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044551077
- Артикул
- SQJ433EP-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series
- Automotive, AEC-Q101, TrenchFETВ®
- FET Type
- P-Channel
- Packaging
- Cut Tape(CT)
Цена по запросу
(от 150,48 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Автомобильный 5-контактный блок питания на транзистораx MOSFET P-CH 30V 75A (4+Tab) SO
Технические параметры
| Brand: | Vishay Semiconductors |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| FET Type | P-Channel |
| Packaging | Cut Tape(CT) |
| Vgs (Max) | В±20V |
| Fall Time: | 49 ns |
| Rise Time: | 21 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.22 |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Vishay Siliconix |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | PowerPAK-SO-8-4 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | PowerPAKВ® SO-8 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 108 nC |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 16A, 10V |
| Pd - Power Dissipation: | 83 W |
| Power Dissipation (Max) | 83W(Tc) |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 17 ns |
| Gate Charge (Qg) (Max) @ Vgs | 108nC @ 10V |
| Typical Turn-Off Delay Time: | 79 ns |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 75 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 40 S |
| Rds On - Drain-Source Resistance: | 6.4 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 4877pF @ 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 75A(Tc) |