SQJ431EP-T1_GE3, 200V 12A 213mOhm@1A,4V 83W P Channel PowerPAK-SO-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026393339
- Артикул
- SQJ431EP-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- Unknown
- Series
- Automotive, AEC-Q101, TrenchFETВ®
- EU RoHS
- Compliant
Цена по запросу
(от 273,37 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans MOSFET P-CH 200V 12A Автомобильный 5-контактный (4 + вкладки) блок питания SO T/R
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| EU RoHS | Compliant |
| FET Type | P-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Vgs (Max) | В±20V |
| Automotive | Yes |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.23 |
| PCB changed | 4 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Vishay Siliconix |
| Корпус | SO-8 |
| Configuration | Single Triple Source |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAKВ® SO-8 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Vgs(th) (Max) @ Id | 3.5V @ 250ВµA |
| Структура | P-Channel |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Power Dissipation (Pd) | 83W |
| Rds On (Max) @ Id, Vgs | 213mOhm @ 1A, 4V |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 11 |
| Особенности | - |
| Power Dissipation (Max) | 83W(Tc) |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Supplier Temperature Grade | Automotive |
| Total Gate Charge (Qg@Vgs) | 160nC@10V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss@Vds) | 4.355nF@25V |
| Continuous Drain Current (Id) | 12A |
| Drain to Source Voltage (Vdss) | 200V |
| Maximum Power Dissipation (mW) | 83000 |
| Typical Gate Charge @ 10V (nC) | 71 |
| Typical Gate Charge @ Vgs (nC) | 71@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 44 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 4355pF @ 25V |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3483@25V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Maximum Drain Source Resistance (mOhm) | 213@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Current - Continuous Drain (Id) @ 25В°C | 12A(Tc) |
| Пороговое напряжение на затворе | 3.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 83 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 213mΩ@1A, 4V |