SQJ431AEP-T1_GE3, 200V 9.4A 305mOhm@3.8A,10V 68W 3.5V@250uA 1 PIece P-Channel PowerPAK-SO-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072634228
- Артикул
- SQJ431AEP-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 5mm
- Brand:
- Vishay/Siliconix
- Series
- TrenchFET
- Series:
- SQ
Цена по запросу
(от 207 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовой МОП-транзистор TrenchFET®
Технические параметры
| Width | 5mm |
| Brand: | Vishay/Siliconix |
| Series | TrenchFET |
| Series: | SQ |
| Pin Count | 4 |
| Fall Time: | 5 ns |
| Rise Time: | 5 ns |
| Tradename: | PowerPAK |
| Вес, г | 0.24 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | PowerPAK SO-8L |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | PowerPAK-SO-8L-4 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 55 nC |
| Automotive Standard | AEC-Q101 |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 1.2V |
| Pd - Power Dissipation: | 68 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 68 W |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Maximum Drain Source Voltage | 200 V |
| Typical Turn-Off Delay Time: | 35 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 9.4 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 15 S |
| Maximum Drain Source Resistance | 760 mΩ |
| Maximum Continuous Drain Current | 9.4 A |
| Rds On - Drain-Source Resistance: | 305 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |