SQD50N10-8M9L_GE3, 100V 50A 8.9mOhm@10V,15A 136W 2.5V@250uA N Channel TO-252-2 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070110467
- Артикул
- SQD50N10-8M9L_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- Unknown
- Brand:
- Vishay Semiconductors
- Mounting
- Surface Mount
Цена по запросу
(от 268,01 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Автомобильные N-канальные 100-вольтовые МОП-транзисторы SQD50Nxx Vishay Siliconix Автомобильные N-канальные 100-вольтовые МОП-транзисторы SQD50Nxx относятся к семейству мощныx МОП-транзисторов TrenchFET®. N-канальные МОП-транзисторы SQD50Nxx от Vishay соответствуют стандарту AEC-Q101 и на 100% протестированы на соответствие стандартам Rg и UIS. Эти устройства имеют единую конфигурацию и могут эксплуатироваться и xраниться при температуре до 175ºC.
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Brand: | Vishay Semiconductors |
| Mounting | Surface Mount |
| Pin Count | 3 |
| Automotive | Yes |
| Fall Time: | 120 ns |
| Rise Time: | 12 ns |
| Вес, г | 0.45 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Vishay |
| Package Width | 6.22(Max) |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package Length | 6.73(Max) |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | TO-252AA |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 46 nC |
| Process Technology | TrenchFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2000 |
| Typical Fall Time (ns) | 120 |
| Typical Rise Time (ns) | 12 |
| Pd - Power Dissipation: | 136 W |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 95 ns |
| Id - Continuous Drain Current: | 50 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 136000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 46 |
| Typical Gate Charge @ Vgs (nC) | 46@10V |
| Forward Transconductance - Min: | 67 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 95 |
| Rds On - Drain-Source Resistance: | 8.9 mOhms |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 2340@25V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (mOhm) | 8.9@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Maximum Gate Source Leakage Current (nA) | 100 |