SQD40061EL_GE3, 40V 100A 5.1mOhm@30A,10V 107W P Channel TO-252 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062864088
- Артикул
- SQD40061EL_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 2.38mm
- Brand:
- Vishay/Siliconix
- Series
- Automotive, AEC-Q101, TrenchFETВ®
- Series:
- SQ
Цена по запросу
(от 120 ₽)
Минимальный заказ: 2000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовой МОП-транзистор TrenchFET® с низким тепловым сопротивлением
Технические параметры
| Width | 2.38mm |
| Brand: | Vishay/Siliconix |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| Series: | SQ |
| FET Type | P-Channel |
| Packaging | Cut Tape(CT) |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Fall Time: | 160 ns |
| Rise Time: | 180 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Vishay Siliconix |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 280 nC |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 1.5V |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 30A, 10V |
| Pd - Power Dissipation: | 107 W |
| Power Dissipation (Max) | 107W(Tc) |
| Supplier Device Package | TO-252AA |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 107 W |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 145 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 40V |
| Id - Continuous Drain Current: | 100 A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 1.5V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 103 S |
| Maximum Drain Source Resistance | 10 mΩ |
| Maximum Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance: | 7.1 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 14500pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 100A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |