SQD19P06-60L-GE3, MOSFETs RECOMMENDED ALT SQD1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025528884
- Артикул
- SQD19P06-60L-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- DPAK, TO252
- Width
- 6.22mm
- Series
- SQ Rugged
- Mounting
- SMD
Цена по запросу
(от 155,73 ₽)
Минимальный заказ: 2000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | DPAK, TO252 |
| Width | 6.22mm |
| Series | SQ Rugged |
| Mounting | SMD |
| Pin Count | 3 |
| Вес, г | 1 |
| Gate charge | 27nC |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | VISHAY |
| Package Type | DPAK(TO-252) |
| Polarisation | unipolar |
| Drain current | -11A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Power dissipation | 15W |
| Type of transistor | P-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | ±20V |
| On-state resistance | 55mΩ |
| Transistor Material | Si |
| Drain-source voltage | -60V |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 46 W |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Drain Source Resistance | 125 mΩ |
| Maximum Continuous Drain Current | 11 A |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |