SQA410EJ-T1-GE3, RECOMMENDED ALT 781-SQA410EJ-T1_GE3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025434175
- Артикул
- SQA410EJ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series
- Automotive, AEC-Q101, TrenchFETВ®
- FET Type
- N-Channel
- Packaging
- Cut Tape(CT)
Цена по запросу
(от 54,43 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-КАНАЛЬНЫЙ МОП-ТРАНЗИСТОР 20 В (D-S) 175C, СООТВЕТСТВУЮЩИЙ требованиям ROHS: НЕТ
Технические параметры
| Brand: | Vishay/Siliconix |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| FET Type | N-Channel |
| Packaging | Cut Tape(CT) |
| Vgs (Max) | В±8V |
| Fall Time: | 8 ns |
| Rise Time: | 8 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Vishay Siliconix |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | SC-70-6 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | PowerPAKВ® SC-70-6 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8 nC |
| Vgs(th) (Max) @ Id | 1.1V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 13.6W |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 4.5V |
| Особенности | - |
| Pd - Power Dissipation: | 13.6 W |
| Power Dissipation (Max) | 13.6W(Tc) |
| Total Gate Charge (Qg@Vgs) | 8nC@4.5V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 8 ns |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Input Capacitance (Ciss@Vds) | 485pF@10V |
| Typical Turn-Off Delay Time: | 21 ns |
| Continuous Drain Current (Id) | 7.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 7.8 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 31 S |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 485pF @ 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 450 mV |
| Current - Continuous Drain (Id) @ 25В°C | 7.8A(Tc) |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |