SQA405CEJW-T1_GE3, MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8018733930
- Артикул
- SQA405CEJW-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Fall Time:
- 6 ns
- Rise Time:
- 4 ns
- Technology:
- Si
Цена по запросу
(от 59,21 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Fall Time: | 6 ns |
| Rise Time: | 4 ns |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | PowerPAK SO-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 34 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Особенности | - |
| Pd - Power Dissipation: | 13.6 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9 ns |
| Typical Turn-Off Delay Time: | 32 ns |
| Id - Continuous Drain Current: | 9 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 18 S |
| Rds On - Drain-Source Resistance: | 45.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |