SQ3418AEEV-T1_GE3, Транзистор
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8060244384
- Артикул
- SQ3418AEEV-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Fall Time:
- 37 ns
- Rise Time:
- 28 ns
- Вес, г
- 15
Цена по запросу
(от 285 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор
Технические параметры
| Brand: | Vishay Semiconductors |
| Fall Time: | 37 ns |
| Rise Time: | 28 ns |
| Вес, г | 15 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | TSOP-6 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SQ3418AEEV-T1_BE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 12.4 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 5 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6 ns |
| Typical Turn-Off Delay Time: | 12 ns |
| Id - Continuous Drain Current: | 8 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 26 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |