SQ2398ES-T1_GE3, 100V 1.6A 300mOhm@1.5A,10V 2W 3.5V@250uA null SOT-23-3 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8033684037
- Артикул
- SQ2398ES-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- Yes
- Series
- Automotive, AEC-Q101, TrenchFETВ®
- EU RoHS
- Compliant
- FET Type
- N-Channel
Цена по запросу
(от 65,66 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 1.6A автомобильный 3-контактный SOT-23 T/R
Технические параметры
| PPAP | Yes |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| EU RoHS | Compliant |
| FET Type | N-Channel |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape(CT) |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.04 |
| FET Feature | - |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Vishay Siliconix |
| Корпус | SOT-23-3 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Vgs(th) (Max) @ Id | 3.5V @ 250ВµA |
| Структура | MOSFET |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Standard Package Name | SOT |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.5A, 10V |
| Typical Fall Time (ns) | 17 |
| Typical Rise Time (ns) | 18 |
| Особенности | - |
| Power Dissipation (Max) | 2W(Tc) |
| Supplier Device Package | SOT-23-3(TO-236) |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 2.3 |
| Typical Gate Charge @ Vgs (nC) | 2.3@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 7 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 152pF @ 50V |
| Maximum Continuous Drain Current (A) | 1.6 |
| Typical Input Capacitance @ Vds (pF) | 152@50V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain Source Resistance (mOhm) | 300@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Current - Continuous Drain (Id) @ 25В°C | 1.6A(Tc) |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.6 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 300мОм |