SQ2325ES-T1_GE3, 150V 840mA 1.77Ohm@10V,500mA 3W P Channel SOT-23(TO-236) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026393080
- Артикул
- SQ2325ES-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SOT23
- PPAP
- Unknown
- RDS-on
- 1.3@10V Ohm
- EU RoHS
- Compliant
Цена по запросу
(от 70,11 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 150V 0.84A автомобильный 3-контактный SOT-23 T/R
Технические параметры
| Case | SOT23 |
| PPAP | Unknown |
| RDS-on | 1.3@10V Ohm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 0.04 |
| Application | automotive industry |
| Gate charge | 10nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | VISHAY |
| Polarisation | unipolar |
| Корпус | SOT-23 |
| Configuration | Single |
| Drain current | -1A |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Screening Level | Automotive |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 1W |
| Typical Fall Time | 21 ns |
| Typical Rise Time | 15 ns |
| Process Technology | TrenchFET |
| Type of transistor | P-MOSFET |
| Структура | P-Channel |
| Gate-source voltage | ±20V |
| On-state resistance | 4.4Ω |
| Drain-source voltage | -150V |
| Pulsed drain current | -2A |
| Operating Temperature | -55 to 175 °C |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 3W |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 14 |
| Особенности | - |
| Supplier Temperature Grade | Automotive |
| Total Gate Charge (Qg@Vgs) | 10nC@10V |
| Typical Turn-On Delay Time | 10 ns |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 25 ns |
| Input Capacitance (Ciss@Vds) | 250pF@50V |
| Maximum Drain Source Voltage | 150 V |
| Continuous Drain Current (Id) | 840mA |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Gate Charge @ 10V (nC) | 7.4 |
| Typical Gate Charge @ Vgs (nC) | 7.4@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 8 |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage (V) | 150 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.84 |
| Typical Input Capacitance @ Vds (pF) | 200@50V |
| Maximum Drain Source Resistance (mOhm) | 1770@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | 3.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 150 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.84 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 1.77Ω@10V, 500mA |