N-Channel MOSFET, 8 A, 40 V, 3-Pin SOT-23 SQ2318BES-T1_GE3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8023318686
- Артикул
- SQ2318BES-T1_GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Type
- Power MOSFET
- Brand:
- Vishay/Siliconix
- Series:
- SQ
- Mounting
- Surface Mount
Цена по запросу
(от 160 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Автомобильный N-канальный МОП-транзистор Vishay на 40 В (D-S) 175°C имеет тип корпуса SOT-23. Соответствует стандарту AEC-Q101.
Технические параметры
| Type | Power MOSFET |
| Brand: | Vishay/Siliconix |
| Series: | SQ |
| Mounting | Surface Mount |
| Polarity | N |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Fall Time: | 2.9 ns |
| Rise Time: | 3.7 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Rad Hardened | No |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SQ2318BES |
| Transistor Type: | 1 N-Channel |
| Power Dissipation | 3(W) |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 6.7 nC |
| Number of Elements | 1 |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Drain-Source On-Volt | 40(V) |
| Operating Temp Range | -55C to 175C |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 3 W |
| Continuous Drain Current | 8(A) |
| Gate-Source Voltage (Max) | ±20(V) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7.8 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 15.6 ns |
| Id - Continuous Drain Current: | 8 A |
| Maximum Gate Threshold Voltage | 1.5 → 2.5V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 0.021 Ω |
| Maximum Continuous Drain Current | 8 A |
| Rds On - Drain-Source Resistance: | 26.3 mOhms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |