SPZT651T1G, SOT-223-4 BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062411075
- Артикул
- SPZT651T1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.22
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 141 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.22 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 2A |
| Factory Pack Quantity: | 1000 |
| Power Dissipation (Pd) | 800mW |
| Pd - Power Dissipation: | 800 mW |
| Transition Frequency (fT) | 75MHz |
| Gain Bandwidth Product fT: | 75 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 75@1A, 2V |
| Collector- Base Voltage VCBO: | 80 V |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hfe Min: | 75 at 50 mA, 2 VDC |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@200mA, 2A |