SPW35N60C3FKSA1, MOSFET транзистор PG-TO247-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8073958201
- Артикул
- SPW35N60C3FKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 5.21 mm
- Height
- 21.1 mm
Цена по запросу
(от 1 454,36 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 5.21 mm |
| Height | 21.1 mm |
| Length | 16.13 mm |
| Series | CoolMOS C3 |
| Military | No |
| Fall Time | 10 ns |
| Packaging | Tube |
| Pin Count | 3 |
| Rise Time | 5 ns |
| Tradename | CoolMOS |
| Automotive | No |
| Technology | Si |
| Вес, г | 8.08 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | TO-247 |
| Configuration | 1 N-Channel |
| Mounting Type | Through Hole |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Part # Aliases | SP000014970 SPW35N60C3FKSA1 SPW35N60C3XK |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 200 nC |
| Supplier Package | TO-247 |
| Number of Channels | 1 Channel |
| Process Technology | CoolMOS |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 240 |
| Standard Package Name | TO-247 |
| Pd - Power Dissipation | 313 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 313 W |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 10 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 70 ns |
| Maximum Drain Source Voltage | 650 V |
| Id - Continuous Drain Current | 34.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Operating Temperature - (??C) | -55~150 |
| Forward Transconductance - Min | 36 S |
| Maximum Gate Threshold Voltage | 3.9V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Continuous Drain Current | 34.6 A |
| Maximum Power Dissipation - (mW) | 313000 |
| Rds On - Drain-Source Resistance | 81 mOhms |
| Typical Gate Charge @ 10V - (nC) | 150 |
| Typical Gate Charge @ Vgs - (nC) | 150@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Drain Source Voltage - (V) | 650 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Maximum Continuous Drain Current - (A) | 34.6 |
| Typical Input Capacitance @ Vds - (pF) | 4500@25V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Maximum Drain Source Resistance - (mOhm) | 100@10V |