SPW11N80C3FKSA1, Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, Through Hole
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- Код товара
- 8632694085
- Артикул
- SPW11N80C3FKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Q(g)
- 85 nC
- Type
- Power MOSFET
- V(DS)
- 800 V
- Width
- 5.21mm
Цена по запросу
(от 507 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Q(g) | 85 nC |
| Type | Power MOSFET |
| V(DS) | 800 V |
| Width | 5.21mm |
| Brand: | Infineon Technologies |
| P(tot) | 156 W |
| Series | CoolMOS C3 |
| Package | TO-247 |
| R(thJC) | 0.8 K/W |
| Series: | CoolMOS C3 |
| Mounting | Through Hole |
| Polarity | N |
| Packaging | Rail/Tube |
| Pin Count | 3 |
| Automotive | NO |
| Fall Time: | 10 ns |
| Packaging: | Tube |
| Rise Time: | 15 ns |
| Technology | CoolMOS C3 |
| Tradename: | CoolMOS |
| Вес, г | 14.97 |
| Logic level | NO |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Rad Hardened | No |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | N-CH |
| Manufacturer: | Infineon |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| RDS(on)at 10V | 450 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 11 A |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | SPW11N8C3XK SP000013703 SPW11N80C3FKSA1 |
| Transistor Type: | 1 N-Channel |
| Power Dissipation | 156(W) |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 85 nC |
| Number of Elements | 1 |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Drain-Source On-Volt | 800(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 156 W |
| Continuous Drain Current | 11(A) |
| Transistor Configuration | Single |
| Gate-Source Voltage (Max) | ±20(V) |
| Maximum Power Dissipation | 156 W |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 25 ns |
| Maximum Drain Source Voltage | 800 V |
| Typical Turn-Off Delay Time: | 72 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 11 A |
| Maximum Gate Threshold Voltage | 3.9V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.1V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 450 mΩ |
| Maximum Continuous Drain Current | 11 A |
| Rds On - Drain-Source Resistance: | 390 mOhms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Крутизна характеристики, S | 7.5 |
| Пороговое напряжение на затворе | 3…5 |
| Максимальное напряжение сток-исток Uси,В | 800 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 11 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 156 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.39 Ом |