SPP20N60CFDXKSA1, MOSFETs N-Ch 600V 20.7A TO220-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006235362
- Артикул
- SPP20N60CFDXKSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Military
- No
- Packaging
- Tube
- Pin Count
- 3
Цена по запросу
(от 505,81 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Одноканальный N-канальный Моп-транзистор CoolMOS мощностью 650 В 220 Мом 95 nC - TO-220-3
Технические параметры
| Brand: | Infineon Technologies |
| Military | No |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 6.4 ns |
| Packaging: | Tube |
| Rise Time: | 15 ns |
| Вес, г | 2 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | Transistors |
| Корпус | to220 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | SPP20N60CFD SP000681060 |
| Supplier Package | TO-220AB |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 95 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-220 |
| Factory Pack Quantity: | 500 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 208 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 59 ns |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 20.7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 17.5 S |
| Maximum Power Dissipation - (mW) | 208000 |
| Typical Gate Charge @ 10V - (nC) | 95 |
| Typical Gate Charge @ Vgs - (nC) | 95@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 190 mOhms |
| Maximum Drain Source Voltage - (V) | 650 |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Continuous Drain Current - (A) | 20.7 |
| Typical Input Capacitance @ Vds - (pF) | 2400@25V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Maximum Drain Source Resistance - (mOhm) | 220@10V |
| Пороговое напряжение на затворе | 5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 20.7 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |