SPD15P10PGBTMA1, Транзистор P-МОП, полевой, -100В, -15А, 128Вт, PG-TO252-3
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- Код товара
- 8062588030
- Артикул
- SPD15P10PGBTMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 16 ns
- Rise Time:
- 23 ns
- Вес, г
- 0.03
Цена по запросу
(от 248 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовой транзистор Infineon SIPMOS относится к инновационному семейству P-канальныx МОП-транзисторов OptiMOS.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 16 ns |
| Rise Time: | 23 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Channel Type | P |
| Package Type | PG-TSDSON-8 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SPD15P10P G SP000212233 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 128 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9.5 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 33 ns |
| Id - Continuous Drain Current: | 15 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 4.7 S |
| Maximum Continuous Drain Current | 15 A |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |