SPD08P06PGBTMA1, Транзистор P-МОП, полевой, -60В, -8,8А, 42Вт, PG-TO252-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070052932
- Артикул
- SPD08P06PGBTMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 6.22mm
- Brand:
- Infineon Technologies
- Series
- SIPMOS
- Series:
- XPD08P06
Цена по запросу
(от 86,13 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Малосигнальные P-канальные МОП-транзисторы Infineon SIPMOS® обладают рядом функций, которые могут включать режим усиления, постоянный ток разряда, иногда достигающий -80 А, а также широкий диапазон рабочиx температур.
Технические параметры
| Width | 6.22mm |
| Brand: | Infineon Technologies |
| Series | SIPMOS |
| Series: | XPD08P06 |
| Pin Count | 3 |
| Fall Time: | 14 ns |
| Rise Time: | 46 ns |
| Вес, г | 0.41 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | SPD08P06P G SP000450534 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 42 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 42 W |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 48 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 8.83 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +175 C |
| Minimum Gate Threshold Voltage | 2.1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2.5 S |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Continuous Drain Current | 8.8 A |
| Rds On - Drain-Source Resistance: | 230 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |