SPD02N80C3ATMA1, Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002441312
- Артикул
- SPD02N80C3ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- Infineon Technologies
Цена по запросу
(от 167 ₽)
Минимальный заказ: 150 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 800V 2A 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 6.22 mm |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Series | CoolMOS C3 |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 18 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 15 ns |
| Tradename | CoolMOS |
| Automotive | No |
| Technology | Si |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Unit Weight | 0.139332 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | DPAK(TO-252) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Part # Aliases | SP001117754 SPD02N80C3 |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Qg - Gate Charge | 16 nC |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 5 |
| Number of Channels | 1 Channel |
| Process Technology | CoolMOS |
| Структура | N-Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 2500 |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 42 W |
| Typical Fall Time (ns) | 18 |
| Typical Rise Time (ns) | 15 |
| Особенности | высоковольтный |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 25 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 72 ns |
| Maximum Drain Source Voltage | 800 V |
| Id - Continuous Drain Current | 2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Gate Threshold Voltage | 3.9V |
| Maximum Power Dissipation (mW) | 42000 |
| Typical Gate Charge @ 10V (nC) | 9 |
| Typical Gate Charge @ Vgs (nC) | 9@10V |
| Maximum Drain Source Resistance | 2.7 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 25 |
| Maximum Continuous Drain Current | 2 A |
| Maximum Drain Source Voltage (V) | 800 |
| Rds On - Drain-Source Resistance | 2.4 Ohms |
| Typical Turn-Off Delay Time (ns) | 65 |
| Maximum Gate Threshold Voltage (V) | 3.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2 |
| Typical Input Capacitance @ Vds (pF) | 290@25V |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Maximum Drain Source Resistance (mOhm) | 2700@10V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 800 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |