SPB80P06P G, MOSFETs P-Ch -60V 80A D2PAK-2
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- Код товара
- 8061285071
- Артикул
- SPB80P06P G
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 30 ns
- Rise Time:
- 18 ns
- Вес, г
- 3.96
Цена по запросу
(от 1 186,14 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 30 ns |
| Rise Time: | 18 ns |
| Вес, г | 3.96 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SPB8P6PGXT SP000096088 SPB80P06PGATMA1 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 115 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 340 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 24 ns |
| Typical Turn-Off Delay Time: | 56 ns |
| Id - Continuous Drain Current: | 80 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 18 S |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |