SPB18P06PGATMA1, Trans MOSFET P-CH 60V 18.7A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001292122
- Артикул
- SPB18P06PGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- Unknown
- Q(g)
- 28 nC
- V(DS)
- 60 V
Цена по запросу
(от 120 ₽)
Минимальный заказ: 260 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 60V 18,7A автомобильный 3-контактный (2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Q(g) | 28 nC |
| V(DS) | 60 V |
| Brand: | Infineon Technologies |
| P(tot) | 81.1 W |
| EU RoHS | Compliant with Exemption |
| Package | D2PAK |
| R(thJC) | 1.85 K/W |
| Series: | XPB18P06 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Fall Time: | 11 ns |
| Rise Time: | 5.8 ns |
| Technology | SIPMOS |
| Вес, г | 1 |
| Logic level | NO |
| PCB changed | 2 |
| Part Status | Active |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| RDS(on)at 10V | 130 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 18.6 A |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Part # Aliases: | SPB18P06P G SP000102181 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 28 nC |
| Process Technology | SIPMOS |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 5.8 |
| Особенности | автомобильные приложения |
| Pd - Power Dissipation: | 81.1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 25 ns |
| Id - Continuous Drain Current: | 18.7 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 81100 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Gate Charge @ Vgs (nC) | 22@10V |
| Forward Transconductance - Min: | 5 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 24.5 |
| Rds On - Drain-Source Resistance: | 101 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18.7 |
| Typical Input Capacitance @ Vds (pF) | 690@25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 130@10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 18.7 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 81.1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |