Моя заявка (0)

SMUN5214DW1T1G, Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 0.25W; SOT363; R1: 10k?

SMUN5214DW1T1G, Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 0.25W; SOT363; R1: 10k?

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8025870123
Артикул
SMUN5214DW1T1G
Бренд
ON Semiconductor***
HTS
8541.29.00.95
Case
SC70-6, SC88, SOT363
Type
NPN
EU RoHS
Compliant
Цена по запросу
(от 33,44 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

HTS8541.29.00.95
CaseSC70-6, SC88, SOT363
TypeNPN
EU RoHSCompliant
MilitaryNo
MountingSMD
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Вес, г0.02
Applicationautomotive industry
PCB changed6
Part StatusActive
ManufacturerONSEMI
Polarisationbipolar
КорпусSOT-363
Base resistor10kΩ
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Kind of packagereel, tape
Supplier PackageSC-88
Collector current0.1A
Power dissipation0.25W
Kind of transistorBRT
Type of transistorNPN x2
Структураnpn
AEC Qualified NumberAEC-Q101
Base-emitter resistor47kΩ
Standard Package NameSC
Typical Resistor Ratio0.21
Minimum DC Current Gain80@5mA@10V
Collector-emitter voltage50V
Minimum DC Current Gain Range50 to 120
Typical Input Resistor (kOhm)10
Maximum Power Dissipation (mW)385
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)50
Maximum Continuous DC Collector Current (mA)100
Maximum Collector-Emitter Saturation Voltage (V)0.25@0.3mA@10mA

Техническая документация