SMSD602-RT1G, Bipolar Transistors - BJT SS SC59 GP XSTR NPN 25V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006228242
- Артикул
- SMSD602-RT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Packaging:
- Reel, Cut Tape
- Вес, г
- 1
- Power - Max
- 200 mW
Цена по запросу
(от 23,92 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный (BJT) транзистор NPN 50 В 500 мА 200 МВт для поверxностного монтажа SC-59
Технические параметры
| Brand: | onsemi |
| Packaging: | Reel, Cut Tape |
| Вес, г | 1 |
| Power - Max | 200 mW |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 200 mW |
| Supplier Device Package | SC-59 |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 60 V |
| Maximum DC Collector Current: | 500 mA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Current - Collector Cutoff (Max) | 100nA(ICBO) |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 600 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 150mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |