SMMBTA06LT3G, Bipolar Transistors - BJT SS DR XSTR SPCL TR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005376255
- Артикул
- SMMBTA06LT3G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.04
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 13,23 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
80 В 225 МВт, 100 при 100 мА, 1 В 500 мА на биполярныx транзистораx NPN SOT-23 - BJT ROHS
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.04 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Package/Case: | SOT-23-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 500mA |
| Factory Pack Quantity: | 10000 |
| Power Dissipation (Pd) | 225mW |
| Pd - Power Dissipation: | 300 mW |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 4 V |
| DC Current Gain (hFE@Ic,Vce) | 100@100mA, 1V |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | 500 mA |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 100 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA, 10mA |