SMMBT5089LT1G, Bipolar Transistors - BJT SS LN XSTR NPN 25V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005376249
- Артикул
- SMMBT5089LT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.04
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 28,12 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.04 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Package/Case: | SOT-23-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 300 mW |
| DC Current Gain hFE Max: | 1200 |
| Gain Bandwidth Product fT: | 40 MHz |
| Emitter- Base Voltage VEBO: | 4.5 V |
| Collector- Base Voltage VCBO: | 30 V |
| Continuous Collector Current: | 50 mA |
| Maximum DC Collector Current: | 50 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 300 |
| Collector- Emitter Voltage VCEO Max: | 25 V |
| Collector-Emitter Saturation Voltage: | 500 mV |