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SMMBT4401LT1G, Bipolar Transistors - BJT SMAL SGNL TRANS MINI BLK

SMMBT4401LT1G, Bipolar Transistors - BJT SMAL SGNL TRANS MINI BLK

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Код товара
8004739337
Артикул
SMMBT4401LT1G
Бренд
ON Semiconductor***
PPAP
Yes
Type
NPN
Brand:
onsemi
EU RoHS
Compliant
Цена по запросу
(от 18,24 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT NPN 40V 0.6A 300 МВт Автомобильный 3-контактный SOT-23 T/R

Технические параметры

PPAPYes
TypeNPN
Brand:onsemi
EU RoHSCompliant
Series:MMBT4401L
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
Вес, г0.03
PCB changed3
Part StatusActive
Technology:Si
Package TypeSOT-23
Subcategory:Transistors
ConfigurationSingle
Manufacturer:onsemi
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Qualification:AEC-Q101
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Transistor TypeNPN
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Product Category:Bipolar Transistors-BJT
Transistor Polarity:NPN
Standard Package NameSOT
Collector Current (Ic)600mA
Power Dissipation (Pd)300mW
Pd - Power Dissipation:300 mW
DC Current Gain hFE Max:300
Transistor ConfigurationSingle
Maximum Power Dissipation225 mW
Transition Frequency (fT)250MHz
Gain Bandwidth Product fT:250 MHz
Supplier Temperature GradeAutomotive
Emitter- Base Voltage VEBO:6 V
Maximum Operating Frequency100 MHz
Number of Elements per Chip1
DC Current Gain (hFE@Ic,Vce)100@150mA, 1V
Maximum DC Collector Current600 mA
Maximum Emitter Base Voltage6 V
Collector- Base Voltage VCBO:60 V
Continuous Collector Current:600 mA
Maximum DC Collector Current:600 mA
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage60 V
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)300
Minimum Operating Temperature:-55 C
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Emitter Voltage40 V
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)250(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:40 V
Collector-Emitter Saturation Voltage:750 mV
Maximum Collector-Emitter Voltage (V)40
Collector-Emitter Breakdown Voltage (Vceo)40V
Maximum Base Emitter Saturation Voltage (V)0.95 15mA 150mA|1.2 50mA 500mA
Factory Pack Quantity: Factory Pack Quantity:3000
Maximum Collector-Emitter Saturation Voltage (V)0.4 15mA 150mA|0.75 50mA 500mA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)750mV@500mA, 50mA

Техническая документация