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SMMBT3906LT1G, 40V 300mW 200mA PNP SOT-23 BIpolar TransIstors - BJT ROHS

SMMBT3906LT1G, 40V 300mW 200mA PNP SOT-23 BIpolar TransIstors - BJT ROHS

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Код товара
8060214242
Артикул
SMMBT3906LT1G
Бренд
ON Semiconductor***
PPAP
Yes
Type
PNP
EU RoHS
Compliant
Material
Si
Цена по запросу
(от 16,18 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT PNP 40V 0.2A 300 МВт Автомобильный 3-контактный SOT-23 T/R

Технические параметры

PPAPYes
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
Вес, г0.03
PCB changed3
Part StatusActive
Package TypeSOT-23
КорпусSOT-23(TO-236)
ConfigurationSingle
Mounting TypeSurface Mount
Transistor TypePNP
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Структураpnp
Standard Package NameSOT
Transistor ConfigurationSingle
Maximum Power Dissipation225 mW
Supplier Temperature GradeAutomotive
Maximum Operating Frequency100 MHz
Number of Elements per Chip1
Maximum DC Collector Current200 mA
Maximum Emitter Base Voltage-5 V
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage-40 V dc
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Emitter Voltage40 V
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)250(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)0.95 5mA 50mA|0.85 1mA 10mA
Maximum Collector-Emitter Saturation Voltage (V)0.25 1mA 10mA|0.4 5mA 50mA

Техническая документация