SMMBT3904WT1G, Bipolar Transistors - BJT SS GP XSTR NPN 40V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005376244
- Артикул
- SMMBT3904WT1G
- Бренд
- ON Semiconductor***
- PPAP
- Yes
- Type
- NPN
- Brand
- ON Semiconductor
- Grade
- Automotive
Цена по запросу
(от 30,18 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 40V 0.2A 150 МВт Автомобильный 3-контактный SC-70 T/R
Технические параметры
| PPAP | Yes |
| Type | NPN |
| Brand | ON Semiconductor |
| Grade | Automotive |
| Series | MMBT3904W |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 150 mW |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Product Type | BJTs-Bipolar Transistors |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SC-70 |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | SOT-323 |
| Frequency - Transition | 300MHz |
| Pd - Power Dissipation | 150 mW |
| DC Current Gain HFE Max | 300 |
| Supplier Device Package | SC-70-3(SOT323) |
| Gain Bandwidth Product FT | 300 MHz |
| Emitter- Base Voltage VEBO | 6 V |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 60 V |
| Continuous Collector Current | 200 mA |
| Maximum DC Collector Current | 200 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector (Ic) (Max) | 200 mA |
| DC Collector/Base Gain Hfe Min | 30 |
| Maximum Power Dissipation (mW) | 150 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 300(Min) |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | 0.3 V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 0.85 1mA 10mA|0.95 5mA 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2 1mA 10mA|0.3 5mA 50mA |