SMBT3906DW1T1G, Bipolar Transistors - BJT SS GP XSTR PNP 40V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005376220
- Артикул
- SMBT3906DW1T1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.01
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 36,81 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Package/Case: | SOT-363-6 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 150 mW |
| DC Current Gain hFE Max: | 300 |
| Gain Bandwidth Product fT: | 250 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 40 V |
| Continuous Collector Current: | -200 mA |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 250 mV |