SISS40DN-T1-GE3, Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 29A; Idm: 60A; 33W
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070068464
- Артикул
- SISS40DN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SIS
- Tradename:
- TrenchFET, PowerPAK
- Вес, г
- 1
Цена по запросу
(от 136,17 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SIS |
| Tradename: | TrenchFET, PowerPAK |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-1212-8S-8 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 52 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Id - Continuous Drain Current: | 36.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 21 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |