SISA35DN-T1-GE3, Транзистор: P-MOSFET
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- Код товара
- 8062308922
- Артикул
- SISA35DN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Brand:
- Vishay Semiconductors
- Series
- TrenchFETВ® Gen III ->
Цена по запросу
(от 32 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канал 30 В, 10 А (Ta), 16 А (Tc), 3,2 Вт (Ta), 24 Вт (Tc) для поверxностного монтажа PowerPAKB® 1212-8
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Brand: | Vishay Semiconductors |
| Series | TrenchFETВ® Gen III -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | P-Channel |
| Vgs (Max) | В±20V |
| Fall Time: | 16 ns |
| Rise Time: | 30 ns |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | PowerPAK-1212-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package / Case | PowerPAKВ® 1212-8 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 28 nC |
| Vgs(th) (Max) @ Id | 2.2V @ 250ВµA |
| Base Product Number | SISA35 -> |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 9A, 10V |
| Pd - Power Dissipation: | 24 W |
| Power Dissipation (Max) | 3.2W (Ta), 24W (Tc) |
| Supplier Device Package | PowerPAKВ® 1212-8 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 26 ns |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Typical Turn-Off Delay Time: | 21 ns |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 16 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 25 S |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 19 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Current - Continuous Drain (Id) @ 25В°C | 10A (Ta), 16A (Tc) |