SIS413DN-T1-GE3, 30V 18A 9.4mOhm@10V,15A P Channel PowerPAK1212-8 MOSFETs ROHS
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- Код товара
- 8070211005
- Артикул
- SIS413DN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- COMPONENTS
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
Цена по запросу
(от 88,33 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Решения для промышленного электроснабжения Компания Vishay предлагает один из самыx широкиx в отрасли ассортиментов полупроводниковыx и пассивныx компонентов для промышленного электроснабжения. Ассортимент продукции Vishay для промышленныx источников питания включает в себя силовые МОП-транзисторы, микросxемы питания, выпрямители, диоды, конденсаторы, резисторы и катушки индуктивности.
Технические параметры
| HTS | COMPONENTS |
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SIS |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 8 ns |
| Lead Shape | No Lead |
| Rise Time: | 11 ns, 82 ns |
| Tradename: | TrenchFET, PowerPAK |
| Вес, г | 0.1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Vishay |
| Package Width | 3.05 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Height | 1.07(Max) |
| Package Length | 3.05 |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-1212-8 |
| EDA / CAD Models | SIS413DN-T1-GE3 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 73 nC |
| Process Technology | TrenchFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | PowerPAK 1212 |
| Typical Fall Time (ns) | 8|13 |
| Typical Rise Time (ns) | 11|82 |
| Pd - Power Dissipation: | 52 W |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns, 55 ns |
| Typical Turn-Off Delay Time: | 40 ns, 45 ns |
| Id - Continuous Drain Current: | 18 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3700 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 73 |
| Typical Gate Charge @ Vgs (nC) | 73@10V|35.4@4.5V |
| Forward Transconductance - Min: | 50 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11|55 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 45|42 |
| Rds On - Drain-Source Resistance: | 9.4 mOhms |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Typical Input Capacitance @ Vds (pF) | 4280@15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (MOhm) | 9.4@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |