SIS413DN-T1-GE3, 30V 18A 9.4mOhm@10V,15A P Channel PowerPAK1212-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061934653
- Артикул
- SIS413DN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- COMPONENTS
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 50 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 |
| Package Height | 1.07(Max) |
| Package Length | 3.05 |
| EDA / CAD Models | SIS413DN-T1-GE3 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | PowerPAK 1212 |
| Typical Fall Time (ns) | 8|13 |
| Typical Rise Time (ns) | 11|82 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3700 |
| Typical Gate Charge @ 10V (nC) | 73 |
| Typical Gate Charge @ Vgs (nC) | 73@10V|35.4@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11|55 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 45|42 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Typical Input Capacitance @ Vds (pF) | 4280@15V |
| Maximum Drain Source Resistance (MOhm) | 9.4@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |