SIRA64DP-T1-GE3, Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070071949
- Артикул
- SIRA64DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series:
- SIR
- Packaging:
- Reel, Cut Tape
- Tradename:
- TrenchFET, PowerPAK
Цена по запросу
(от 230 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Series: | SIR |
| Packaging: | Reel, Cut Tape |
| Tradename: | TrenchFET, PowerPAK |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 43 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 27.8 W |
| Vgs - Gate-Source Voltage: | -16 V, +20 V |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 2.1 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |