SIR872ADP-T1-RE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070061266
- Артикул
- SIR872ADP-T1-RE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 7 ns
- Rise Time:
- 12 ns
- Вес, г
- 0.1
Цена по запросу
(от 252,98 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 7 ns |
| Rise Time: | 12 ns |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | PowerPAK-SO-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 47 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 104 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Id - Continuous Drain Current: | 53.7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 30 S |
| Rds On - Drain-Source Resistance: | 14.8 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |