SIR836DP-T1-GE3, Транзистор: N-MOSFET; полевой; 40В; 21А; Idm: 50А; 10Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070121211
- Артикул
- SIR836DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SIR
- Fall Time:
- 9 ns
- Rise Time:
- 13 ns
Цена по запросу
(от 88,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SIR |
| Fall Time: | 9 ns |
| Rise Time: | 13 ns |
| Tradename: | TrenchFET, PowerPAK |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SIR836DP-GE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11.8 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 15.6 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Id - Continuous Drain Current: | 21 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 35 S |
| Rds On - Drain-Source Resistance: | 19 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |